Segregation of boron to polycrystalline and single-crystal
نویسندگان
چکیده
Strong boron segregation to polycrystalline Si1 x yGexCy alloys from Si has previously been reported [MRS Symp. Proc. 669 (2001) J6.9]. In this study, we investigate potential mechanisms for this effect. We find that comparable segregation also occurs in both polycrystalline Si1 yCy and single-crystal Si1 x yGexCy, indicating neither Ge nor grain boundary effects are needed for it to occur. In addition, the stability of the electrical properties of polycrystalline Si1 x yGexCy with annealing suggests that inactive B–C defects are not forming. Point defect gradients are presented as a mechanism consistent with the electrical data. # 2003 Elsevier B.V. All rights reserved.
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